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    Thermocompression Bonding Machine TCB350
    • Thermocompression Bonding Machine TCB350

    Thermocompression Bonding Machine TCB350

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    Thermocompression Bonding MachineTCB350
    1.Substrate size/BH size300 mm*300 mm   50mm*50mm
    2.Mounting precision≤±2um
    3.Stage heating temperature≥200℃, ±5% or ±10℃
    4. Stage vacuum adsorptionmaximum 92kPa, can be adjustable
    5. Stage Orthopedic abilityAchieve 300*300 rectangle，thickness 0.3~3mm Correction of rectangular substrates
    6. BH heating temperature≥350℃, ±5% or ±10℃
    7.BH heating ratio≥100℃
    8. Bonding pressure1~500N, step≤1N
    9. BH flatness<5 μm (Hot state to be measured
    10. AtmosphereN2: Residual oxygen ≤ 200ppm
    11. Die loading method12 '' Wafer Manual feeding
    12. Size2400mm*1500mm*2000mm
    13. Power supply220V/50Hz,8KW
    14. Cooling waterYes
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    • Characteristic：

       

      Thermocompression Bonding MachineTCB350
      1.Substrate size/BH size300 mm*300 mm   50mm*50mm
      2.Mounting precision≤±2um
      3.Stage heating temperature≥200℃, ±5% or ±10℃
      4. Stage vacuum adsorptionmaximum 92kPa, can be adjustable
      5. Stage Orthopedic abilityAchieve 300*300 rectangle，thickness 0.3~3mm Correction of rectangular substrates
      6. BH heating temperature≥350℃, ±5% or ±10℃
      7.BH heating ratio≥100℃
      8. Bonding pressure1~500N, step≤1N
      9. BH flatness<5 μm (Hot state to be measured
      10. AtmosphereN2: Residual oxygen ≤ 200ppm
      11. Die loading method12 '' Wafer Manual feeding
      12. Size2400mm*1500mm*2000mm
      13. Power supply220V/50Hz,8KW
      14. Cooling waterYes
      Thermocompression Bonding Machine TCB350

    •  

      Thermocompression Bonding MachineTCB350
      1.Substrate size/BH size300 mm*300 mm   50mm*50mm
      2.Mounting precision≤±2um
      3.Stage heating temperature≥200℃, ±5% or ±10℃
      4. Stage vacuum adsorptionmaximum 92kPa, can be adjustable
      5. Stage Orthopedic abilityAchieve 300*300 rectangle，thickness 0.3~3mm Correction of rectangular substrates
      6. BH heating temperature≥350℃, ±5% or ±10℃
      7.BH heating ratio≥100℃
      8. Bonding pressure1~500N, step≤1N
      9. BH flatness<5 μm (Hot state to be measured
      10. AtmosphereN2: Residual oxygen ≤ 200ppm
      11. Die loading method12 '' Wafer Manual feeding
      12. Size2400mm*1500mm*2000mm
      13. Power supply220V/50Hz,8KW
      14. Cooling waterYes
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