Vacuum Plasma Cleaner (Offline) — VPC42

The VPC42 series vacuum plasma cleaner is a plasma surface treatment device tailored for R&D and small-batch industrial production scenarios. It comes with a comprehensive configuration and a stratifiable vacuum chamber, making it adaptable to most production conditions. It is suitable for a variety of applications including plasma cleaning, activation and etching, and is mainly applied to plasma surface treatment processes in the semiconductor packaging field for silicon wafers, glass substrates, ceramic substrates, IC carriers, copper lead frames, large-size single-sided power substrates, IGBT modules, jig-equipped MEMS sensors, microwave devices, filters, RF devices and more. The equipment features stable operation, with excellent repeatability and consistency in product processing. The software control system of the VPC42 series vacuum plasma cleaner is easy to operate, enabling direct equipment control and setting of various cleaning processes, as well as the setting, modification, storage and recall of parameters for different processes. The software control system automatically records cleaning process parameters, time and alarm-related data in real time, ensuring the traceability of product cleaning processes. The entire cleaning process is fully automated under PLC control. The power of the RF power supply is adjustable to meet the requirements of different working conditions. Ultra-low vacuum level ensures workpiece cleaning in a low-oxygen environment, effectively preventing oxidation. Equipped with a color touch screen interactive operation interface for intuitive real-time display of working parameter status. Realizes automatic loading via a manipulator with wafer cassettes. Adopts digital flow meter for precise gas control, standard configured with two gas paths (multi-gas paths optional). Accessible gases include oxygen, argon, nitrogen, carbon tetrafluoride, hydrogen or mixed gases, ensuring efficient and uniform processing with excellent process repeatability. Features an optimized structural design with a top-opening transfer mode and is equipped with an FFU clean air system. Configured with a two-fluid cleaning unit with a maximum flow rate of 2L/min; integrated with a spin-drying function with a maximum rotation speed of 2000rpm. Performance indicators after activation treatment of silicon oxide wafers: surface contact angle ＜5°; oxide layer thickness variation ＜1nm; roughness Ra variation ＜0.5nm.