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    1.Bonding area2-6inch
    2.Mechanical pressure10T(56T, 100T are optional)
    3.Bonding force2inch: max 50Mpa, 3inch max 22Mpa, 4inch max 12Mpa,5inch max 8Mpa,  6inch max 5.5Mpa
    4.Vacuum3Pa,working vacuum 10-200Pa,molecular pump 10-4Pa
    5.Max temperature320℃
    6.Temperature uniformity≤±1%
    7.Heating rate20-60℃/min
    8.Cooling rate10-30℃/min
    9. Cooling wayWater cooling + nitrogen cooling
    10.Post-Sintering Shear Strength25-35Mpa
    11.Feeding wayManual
    12.Voltage380V, 25-50A
    13.Size1000*80*2050mm
    常见问题1 2 3
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    Alignment and wafer bonding are core processes for wafer-level capping, wafer-level packaging, engineered substrate manufacturing, wafer-level 3D integration, and wafer thinning. These processes have driven the remarkable growth of MEMS devices, RF filters, and BSI (Back-Side Illuminated) CIS (CMOS Image Sensors). Additionally, they enable the fabrication of engineered substrates such as SOI (Silicon on Insulator). Mainstream bonding processes include: adhesive bonding, anodic bonding, direct/fusion bonding, glass frit bonding, solder bonding (including eutectic and transient liquid phase bonding), and metal diffusion/thermocompression bonding.

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    Alignment and wafer bonding are core processes for wafer-level capping, wafer-level packaging, engineered substrate manufacturing, wafer-level 3D integration and wafer thinning. These processes have driven the remarkable growth of MEMS devices, RF filters and BSI (Back-Side Illuminated) CIS (CMOS Image Sensors). In addition, they enable the fabrication of engineered substrates such as SOI (Silicon on Insulator). The mainstream bonding processes include: adhesive bonding, anodic bonding, direct/fusion bonding, glass frit bonding, solder bonding (including eutectic and transient liquid phase bonding), and metal diffusion/thermocompression bonding.

    Thermocompression Bonding Machine — TCB350

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    Wafer Bonder - TORCH180

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    Alignment and wafer bonding ar...
    Alignment and wafer bonding ar...
    TCB350 Thermocompression Bondi...
    The TORCH180 Wafer Bonder is p...
    • Characteristic:

       

      1.Bonding area2-6inch
      2.Mechanical pressure10T(56T, 100T are optional)
      3.Bonding force2inch: max 50Mpa, 3inch max 22Mpa, 4inch max 12Mpa,5inch max 8Mpa,  6inch max 5.5Mpa
      4.Vacuum3Pa,working vacuum 10-200Pa,molecular pump 10-4Pa
      5.Max temperature320℃
      6.Temperature uniformity≤±1%
      7.Heating rate20-60℃/min
      8.Cooling rate10-30℃/min
      9. Cooling wayWater cooling + nitrogen cooling
      10.Post-Sintering Shear Strength25-35Mpa
      11.Feeding wayManual
      12.Voltage380V, 25-50A
      13.Size1000*80*2050mm
      Wafer Bonding Machine	TORCH510
    •  

      1.Bonding area2-6inch
      2.Mechanical pressure10T(56T, 100T are optional)
      3.Bonding force2inch: max 50Mpa, 3inch max 22Mpa, 4inch max 12Mpa,5inch max 8Mpa,  6inch max 5.5Mpa
      4.Vacuum3Pa,working vacuum 10-200Pa,molecular pump 10-4Pa
      5.Max temperature320℃
      6.Temperature uniformity≤±1%
      7.Heating rate20-60℃/min
      8.Cooling rate10-30℃/min
      9. Cooling wayWater cooling + nitrogen cooling
      10.Post-Sintering Shear Strength25-35Mpa
      11.Feeding wayManual
      12.Voltage380V, 25-50A
      13.Size1000*80*2050mm

    Wafer Bonder - TORCH520

    Alignment and wafer bonding are core processes for wafer-level capping, wafer-level packaging, engineered substrate manufacturing, wafer-level 3D integration, and wafer thinning. These processes have driven the remarkable growth of MEMS devices, RF filters, and BSI (Back-Side Illuminated) CIS (CMOS Image Sensors). Additionally, they enable the fabrication of engineered substrates such as SOI (Silicon on Insulator). Mainstream bonding processes include: adhesive bonding, anodic bonding, direct/fusion bonding, glass frit bonding, solder bonding (including eutectic and transient liquid phase bonding), and metal diffusion/thermocompression bonding.

    Wafer Bonder - TORCH530

    Alignment and wafer bonding are core processes for wafer-level capping, wafer-level packaging, engineered substrate manufacturing, wafer-level 3D integration and wafer thinning. These processes have driven the remarkable growth of MEMS devices, RF filters and BSI (Back-Side Illuminated) CIS (CMOS Image Sensors). In addition, they enable the fabrication of engineered substrates such as SOI (Silicon on Insulator). The mainstream bonding processes include: adhesive bonding, anodic bonding, direct/fusion bonding, glass frit bonding, solder bonding (including eutectic and transient liquid phase bonding), and metal diffusion/thermocompression bonding.

    Thermocompression Bonding Machine — TCB350

    TCB350 Thermocompression Bonding Machine (Hot Pressing Bonding) TCB thermocompression bonding is an evolution of the standard flip-chip process, mainly used to complete the bump thermocompression bonding process of chip-to-wafer and chip-to-PCB (and other substrates). At present, this equipment has achieved thermocompression bonding of large-size (50/70mm) bare chips. The maximum size applicable to the substrate vacuum adsorption heating device can reach 300*300mm.

    Wafer Bonder - TORCH180

    The TORCH180 Wafer Bonder is primarily driven by mechanical pressure. For the pressure application unit, this design adopts a precision pneumatic control system and a self-developed positive pressure air bag mechanism to achieve high-precision pressure exertion.
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