Thermocompression Bonding Machine — TCB350

Alignment and wafer bonding are core processes for wafer-level capping, wafer-level packaging, engineered substrate manufacturing, wafer-level 3D integration, and wafer thinning. These processes have driven the remarkable growth of MEMS devices, RF filters, and BSI (Back-Side Illuminated) CIS (CMOS Image Sensors). Additionally, they enable the fabrication of engineered substrates such as SOI (Silicon on Insulator). Mainstream bonding processes include: adhesive bonding, anodic bonding, direct/fusion bonding, glass frit bonding, solder bonding (including eutectic and transient liquid phase bonding), and metal diffusion/thermocompression bonding.

Alignment and wafer bonding are core processes for wafer-level capping, wafer-level packaging, engineered substrate manufacturing, wafer-level 3D integration and wafer thinning. These processes have driven the remarkable growth of MEMS devices, RF filters and BSI (Back-Side Illuminated) CIS (CMOS Image Sensors). In addition, they enable the fabrication of engineered substrates such as SOI (Silicon on Insulator). The mainstream bonding processes include: adhesive bonding, anodic bonding, direct/fusion bonding, glass frit bonding, solder bonding (including eutectic and transient liquid phase bonding), and metal diffusion/thermocompression bonding.

TCB350 Thermocompression Bonding Machine (Hot Pressing Bonding) TCB thermocompression bonding is an evolution of the standard flip-chip process, mainly used to complete the bump thermocompression bonding process of chip-to-wafer and chip-to-PCB (and other substrates). At present, this equipment has achieved thermocompression bonding of large-size (50/70mm) bare chips. The maximum size applicable to the substrate vacuum adsorption heating device can reach 300*300mm.

The TORCH180 Wafer Bonder is primarily driven by mechanical pressure. For the pressure application unit, this design adopts a precision pneumatic control system and a self-developed positive pressure air bag mechanism to achieve high-precision pressure exertion.