Wafer Bonder - TORCH530

Alignment and wafer bonding are core processes for wafer-level capping, wafer-level packaging, engineered substrate manufacturing, wafer-level 3D integration and wafer thinning. These processes have driven the remarkable growth of MEMS devices, RF filters and BSI (Back-Side Illuminated) CIS (CMOS Image Sensors). In addition, they enable the fabrication of engineered substrates such as SOI (Silicon on Insulator). The mainstream bonding processes include: adhesive bonding, anodic bonding, direct/fusion bonding, glass frit bonding, solder bonding (including eutectic and transient liquid phase bonding), and metal diffusion/thermocompression bonding. The TORCH520 Bonder is mainly designed for the 8-inch (D200mm) wafer bonding process. It achieves wafer bonding through uniform pressure application and precise displacement control under thermal conditions. The equipment offers optional processes for product pressurization under low vacuum of 0.1 mbar/high vacuum of 1E-6 mbar, with a maximum pressure of 60 KN and a maximum heating temperature of 650°C under pressurization. It can meet the temperature ramp-up and ramp-down rate requirement of 40K/min, and realize positive pressure atmosphere protection at the end of the process with a protective pressure up to 3 bar. The product adopts an upper and lower chamber open-close structure with an ergonomically designed top-opening chamber; the system is equipped with a closed-loop water chiller that achieves rapid cooling through circulating water cooling. An optional formic acid cleaning process is available for the equipment before processing. Specifications Number of chambers: 1 Temperature control mode: Independent temperature control for upper and lower pressure heads Chamber opening mode: Ergonomically designed top-opening chamber System operation mode: Circulating water cooling with a closed-loop water cooling heat exchanger Optional configurations: Pressurization protection; formic acid atmosphere