Nano Silver Positive Pressure Sintering Furnace — SIN100

This nano silver positive pressure sintering furnace is primarily based on mechanical pressure curing. For the pressure application unit, this design adopts a precision hydraulic/electric servo control system to achieve high-precision pressure exertion. A vacuum-sealed structure is adopted for the overall furnace chamber and structural design. The curing process can be conducted in a vacuum environment or a protective atmosphere filled with two or more inert gases, which improves the product curing quality.

The complete equipment consists of the following systems: pressure application system, vacuum system, heating system, temperature control system, cooling system, reduction module, etc. Equipped with 4/6-inch tooling fixtures, and manually compatible with small-size samples; applicable wafer thickness: 0.3~3mm. Temperature control: The indenter temperature is fed back in real time by thermocouples, with 6 sets of PID program control. The upper and lower pressure plates feature independent temperature control, enabling programmable heating, cooling and constant temperature processes with smooth transition during heating and no temperature overshoot. The electric servo control system ensures stable pressure application and uniform pressure distribution (verifiable by pressure-sensitive paper with uniform color development), and enables programmable pressure increasing, pressure decreasing and constant pressure processes. The maximum bonding pressure is 100kN (other specifications optional); the pressure plate is made of silicon carbide (SiC) and the tooling is made of titanium alloy. The vacuum system is composed of a dry pump and a turbomolecular pump, with a pumping speed of ATM~5e-2Pa in less than 7 minutes; the chamber pressure-holding leak rate is ≤1E-5Pa·m³/s, and the vacuum degree is less than 9*10⁻⁷ mBar, with 4 gas control paths (fill gas optional). It is equipped with a hydrogen free radical activation function, which can remove the oxide layer on the Cu metal surface below 180℃ and ensure low-temperature Cu-Cu bonding below 250℃ during the bonding process. Accessible for surface bonding materials such as Au-Au and Cu-Cu; the bonding void rate for 6-inch wafers is ＜3%; the bonding strength is ＞2J/m² (standard sample).